| PART |
Description |
Maker |
| SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU |
Advanced Power MOSFET
Avalanche Rugged Technology
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFU110
100V N-Channel A-FET / Substitute of IRFR120
(IRFR120A / IRFU120A) Advanced Power MOSFET
|
Fairchild Semiconductor
|
| SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7342QPBF10 IRF7342QTRPBF |
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| SFS9630 IRFS9630 |
Advanced Power MOSFET 4.4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRLWI510A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
|
